发明名称 |
MANUFACTURING METHOD OF DISPLAY DEVICE |
摘要 |
The present invention provides a manufacturing method of a display device which can prevent the reduction of a size of a pseudo single-crystalline region having strip-like crystals in forming such a pseudo single-crystalline silicon region on a substrate. A step for forming pseudo single crystals having strip-like crystals on a preset region of a semiconductor film formed on a substrate includes a step for forming the pseudo single crystal by radiating an energy beam to a first region of the semiconductor film while moving a radiation position of the energy beam in a first direction, and a step for forming the pseudo single crystal by radiating the energy beam to a second region of the semiconductor film while moving a radiation position of the energy beam in a second direction opposite to the first direction. The first region and the second region set sizes thereof at a position where the radiation of the energy beam is finished smaller than sizes thereof at a position where the radiation of the energy beam is started. The second region includes a portion where the second region overlaps the first region and a portion where the second region does not overlap the first region.
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申请公布号 |
US2008176351(A1) |
申请公布日期 |
2008.07.24 |
申请号 |
US20070843693 |
申请日期 |
2007.08.23 |
申请人 |
SHIMMOTO HIDEAKI;KAMO TAKAHIRO;NODA TAKESHI;KAITOH TAKUO;OUE EIJI |
发明人 |
SHIMMOTO HIDEAKI;KAMO TAKAHIRO;NODA TAKESHI;KAITOH TAKUO;OUE EIJI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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