发明名称 |
MEMORY DEVICE AND METHOD OF MAKING SAME |
摘要 |
<p>A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a first area of electrical communication with the phase-change material. A second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, and the second area being laterally spacedly disposed from the first area. Additionally, the radial memory device includes a dielectric layer disposed between the first electrode and the second electrode, the dielectric layer having an opening therethrough, the phase-change material being disposed in the opening, wherein the phase-change material is disposed at least partially above the second electrode. Further, a method of making a memory device is disclosed.</p> |
申请公布号 |
WO2008088615(A2) |
申请公布日期 |
2008.07.24 |
申请号 |
WO2007US85391 |
申请日期 |
2007.11.21 |
申请人 |
OVONYX, INC.;CZUBATYJ, WOLODYMYR;LOWREY, TYLER;ASANO, ISAMU |
发明人 |
CZUBATYJ, WOLODYMYR;LOWREY, TYLER;ASANO, ISAMU |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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