| 摘要 |
<p>This invention provides an Al-base alloy wiring material which, in a display device comprising a thin-film transistor, can realize direct junction also to a semiconductor layer such as an n+-Si layer. The Al-base alloy wiring material comprises nickel and boron incorporated in aluminum and is characterized by further comprising nitrogen (N). The nitrogen content is preferably not less than 2 8 1017 atoms/cm3 and less than9 8 1021 atoms/cm3. Preferably, the Al-base alloy wiring material satisfies each of formulae 0.5 = 1.00, and y + 1.15x <= 11.50, provided that x + y + z = 100, wherein x represents the composition ratio of nickel, at.%; y represents the composition ratio of boron, at.%; and z represents the composition ratio of aluminum, at.%, and the balance of the Al-base alloy wiring material comprises nitrogen.</p> |
