摘要 |
A method of and device for implanting semiconductor wafers with ions of N-type clusters of phosphorus (P) or arsenic (As), where the molecular cluster ions have the chemical form A-HX+o,r A-RHX', where A designates either arsenic or phosphorus, n and x are integers with n greater than or equal to 4, and x greater than or equal to 0, and R is a molecule not containing phosphorus or arsenic and which is not injurious to the implantation process These ions are produced from chemical compounds of the form AnHx and AnRHx.
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申请人 |
SEMEQUIP, INC.;MANNING, DENNIS;DYKER, ERIN;HORSKY, THOMAS, N.;BERNSTEIN, BRIAN |
发明人 |
MANNING, DENNIS;DYKER, ERIN;HORSKY, THOMAS, N.;BERNSTEIN, BRIAN |