发明名称 METHOD FOR FORMING SRTIO3 FILM
摘要 A method is used for forming an SrTiO<SUB>3 </SUB>film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C<SUB>5</SUB>(CH<SUB>3</SUB>)<SUB>5</SUB>)<SUB>2 </SUB>is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO<SUB>3 </SUB>film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.
申请公布号 US2008175994(A1) 申请公布日期 2008.07.24
申请号 US20080019262 申请日期 2008.01.24
申请人 TOKYO ELECTRON LIMITED 发明人 KAWANO YUMIKO;KAKIMOTO AKINOBU;KADOKURA HIDEKIMI;HIGASHI SHINTARO
分类号 C23C16/00 主分类号 C23C16/00
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