发明名称 |
HIGH THROUGHPUT, LOW COST DUAL-MODE PATTERNING METHOD FOR LARGE AREA SUBSTRATES |
摘要 |
<p>Methods of the present invention provide a high-throughput, low cost, patterning platform that is an alternative to conventional photolithography and direct laser ablation patterning techniques. The present processing methods are useful for making patterns of microsized and/or nanosized structures having accurately selected physical dimensions and spatial orientation that comprise active and passive components of a range of microelectronic devices. Processing provided by the present methods is compatible with large area substrates, such as device substrates for semiconductor integrated circuits, displays, and microelectronic device arrays and systems, and is useful for fabrication applications requiring patterning of layered materials, such as patterning thin film layers in thin film electronic devices.</p> |
申请公布号 |
WO2008088587(A1) |
申请公布日期 |
2008.07.24 |
申请号 |
WO2007US78516 |
申请日期 |
2007.09.14 |
申请人 |
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS;ANVIK CORPORATION;JAIN, KANTI;CHAE, JUNGHUN;APPASAMY, SREERAM |
发明人 |
JAIN, KANTI;CHAE, JUNGHUN;APPASAMY, SREERAM |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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