| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymer which is high in sensitivity, resolution and light transmittance, when used for resist compositions for DUV excimer laser lithography or the like, is little in defects, when developed, and is excellent in copolymerizability with other monomers, to provide a resist composition, and to provide a method for producing a substrate on which a resist pattern is formed. <P>SOLUTION: The present invention relates to the polymer for resists, containing constituting units (A) each having a specific naphthalene skeleton and constituting units (D) each having a specific hydrophilic group, to the resist composition, and to the method for producing the substrate on which the resist pattern is formed, characterized by having a process for coating the resist composition on a substrate to form a resist film, a process for exposing to light having a wavelength of ≤250 nm, and a process for developing with a developing liquid. <P>COPYRIGHT: (C)2008,JPO&INPIT |
