发明名称 METHOD AND APPARATUS FOR MANUFACTURING DIELECTRIC THIN FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a dielectric thin film, which can improve the productivity by reducing the number of particles. <P>SOLUTION: The method has a step of defining the target number Np of films between dummies for bring the target surface into an initial state, and a step of continuing film deposition processing of the dielectric thin film, until the number Na of films between dummies reaches the target number Np of films between targets. Then, when the number Na of films between dummies reaches the target number Np of films between dummies, only the sputtering gas is introduced into a film deposition chamber, to make dummy sputtering processing for sputtering the target executed, before carrying a subsequent substrate into the film deposition chamber. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008171874(A) 申请公布日期 2008.07.24
申请号 JP20070001353 申请日期 2007.01.09
申请人 ULVAC JAPAN LTD 发明人 NISHIOKA HIROSHI;SUU KOUKO;KIKUCHI MAKOTO;KIMURA ISAO;KONDO TOMOYASU;NAGASHIMA HIDETO;JINBO TAKETO
分类号 H01L21/316;H01L21/31;H01L21/318;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108 主分类号 H01L21/316
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