| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a deep ultraviolet light emitting element having a low operating voltage and a high luminous power conversion efficiency. <P>SOLUTION: The light emitting element 10 is composed of a light emitting section 4 formed of a first III nitride having a luminous wavelength in an ultraviolet region, a first clad section 3 consisting of a second III nitride having a band gap larger than the first III nitride, a first contact section 2 consisting of a third III nitride having the band gap smaller than the second III nitride and a cathode electrode section 7 adjacent to the first contact section 2. The element 10 is further composed of a second clad section 5 consisting of a fourth III nitride having the band gap smaller than the first III nitride, a second contact section 6 consisting of a fifth III nitride having the band gap smaller than the fourth III nitride and an anode electrode section 8 adjacent to the second contact section 6. A trench section 6a as the non-absorbable section of ultraviolet rays is formed to the second contact section 6, and an excitation emission from the light emitting section 4 is extracted while using the trench section 6a as an outgoing section. <P>COPYRIGHT: (C)2008,JPO&INPIT |
