摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a highly reliable nonvolatile semiconductor memory device. <P>SOLUTION: A memory cell 11 includes an irreversible storage element 12, of which the write-in voltage is applied to the one end to write data by an insulating film destruction, and write-in gate N type and read-out gate N type transistors 13, 14, of which one end of each is connected to another end of the irreversible storage element. A write-in word line WLWp and a read-out word line WLRp connected to the gates of the write-in gate N type and read-out gate N type transistors 13, 14, and a write-in bit line BLWn and a read-out bit line BLRp connected to another ends of the write-in gate N type and read-out gate N type transistors 13, 14, are connected to each memory cell 11. The write-in word line WLWp and the read-out word line WLRp are provided with an alternatively driving row decoder 2, and the read-out bit lines BLRp include write disturbance protecting circuits 33 for charging a voltage to a predetermined one. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |