| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device in which thermal interference among cells is reduced. SOLUTION: The memory device includes: a plurality of bit lines BL0 to BL3 which are extended in a first direction; a plurality of word lines WL0 and WL1 which are extended in a second direction crossing the first direction; arrays 152 electrically connected between the bit lines and the word lines, each consisting of arrangements of program volumes that are regions where data can be written in; and thermally conductive stripe shape patterns 172 with stripe shapes having thermal conductivity, which are located between the program volumes constituting the arrays 152 and extended in at least one of the first direction and the second direction. COPYRIGHT: (C)2008,JPO&INPIT
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