发明名称 |
Method of polishing a layer and method of manufacturing a semiconductor device using the same |
摘要 |
In a method of chemically and mechanically polishing a layer, a substrate on which the layer having stepped portions is formed is prepared. The layer is primarily chemically and mechanically polished at a temperature of about 30° C. to about 80° C. to remove the stepped portions of the layer. The layer is secondarily chemically and mechanically polished without the stepped portions at a temperature of about 5° C. to about 25° C. to form a flat layer having a desired thickness. Thus, the stepped portions may be rapidly removed in an initial period so that the method may have an improved throughput.
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申请公布号 |
US2008176403(A1) |
申请公布日期 |
2008.07.24 |
申请号 |
US20070983281 |
申请日期 |
2007.11.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JUN-YONG;HONG CHANG-KI;YOON BO-UN;KWON BYOUNG-HO |
分类号 |
H01L21/306;C23F1/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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