发明名称 |
METHODS OF FORMING SEMICONDUCTOR DEVICES USING SELF-ALIGNED METAL SHUNTS |
摘要 |
A method of fabricating a semiconductor device using a self-aligned metal shunt process is disclosed. The method can include sequentially forming a lower conductive pattern and a sacrificial pattern on a semiconductor substrate. An interlayer dielectric layer is formed to cover the sacrificial pattern. The interlayer dielectric layer is patterned to form a preliminary trench that exposes the top surface of the sacrificial pattern. The exposed sacrificial pattern is removed to form a trench that expose the top surface of the lower conductive pattern. An upper conductive pattern is formed to fill the trench.
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申请公布号 |
US2008176374(A1) |
申请公布日期 |
2008.07.24 |
申请号 |
US20080018469 |
申请日期 |
2008.01.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JON YEOL;CHUNG EUN-KUK;KIM JOON;KIM JIN-HONG |
分类号 |
H01L21/336;H01L21/768 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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