| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymer which has dry etching resistance, is high in sensitivity, resolution and light transmittance, and is wide in focal depth, when used for resist compositions, is little in defects, when developed, and can resist to thin resist films. <P>SOLUTION: The present invention relates to the polymer for resists, containing constituting units A1 each having an acid leaving group-bonded naphthalene skeleton represented by formula (1-1) (Y is an acid-leaving group). <P>COPYRIGHT: (C)2008,JPO&INPIT |
