| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method by which sufficient stress can be applied to a channel region within allowable ranges of concentrations of Ge and C in a mixed crystal layer, and a semiconductor device. <P>SOLUTION: A dummy gate electrode 3 is formed on a Si substrate 1. Then, a recess region 7 is formed by recess etching by using the dummy gate electrode 3 as a mask. On the surface of the recess region 7, a mixed crystal layer 8 composed of a SiGe layer is epitaxially grown. An interlayer insulating film 12 is formed on the mixed crystal layer 8 to cover the dummy gate electrode 3, and the interlayer insulating film 12 is removed until the surface of the dummy gate electrode 3 is exposed. A recess 13 is formed on the interlayer insulating film 12 to expose the Si substrate 1 by removing the dummy gate electrode 3. Then, a gate electrode 15 is formed in the recess 13 by having a gate insulating film 14 in between. <P>COPYRIGHT: (C)2008,JPO&INPIT |
