METHOD FOR FORMING POLYSILICON, THIN FILM TRANSISTOR HAVING THE POLYSILICON, AND METHOD FOR FORMING THE THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for forming polysilicon, a thin film transistor having the polysilicon, and a method for forming the thin film transistor. SOLUTION: The method for forming polysilicon includes: a step for forming an insulation layer 120 on a substrate 110; a step for forming a first electrode 131 and a second electrode 132 on the insulation layer 120; a step for forming at least one heater layer 140 on the insulation layer 120 so as to connect the first electrode 131 and the second electrode 132; a step for forming an amorphous material layer containing silicon at least on the one heater layer 140; a step for forming a through hole 125 at the bottom of the heater layer 140 by etching the insulation layer 120; and a step for crystallizing the amorphous material layer on a polysilicon layer 160 by applying a voltage between the first electrode 131 and the second electrode 132 and heating the heater layer 140. COPYRIGHT: (C)2008,JPO&INPIT