发明名称 FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To etch source/drain electrode layers without damaging an active layer due to over etching, or the like including the scraping of the active layer in patterning by one etching in a state where the electrodes are in contact with the active layer. SOLUTION: A material having resistance against alkali is adopted for the active layer, a material having properties dissolved to alkali is adopted for the source/drain electrodes, and etching is made by alkali etchant when patterning the source/drain electrodes, thus patterning the source/drain electrodes on an upper layer by etching without damaging the lower-layer active layer. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008171991(A) 申请公布日期 2008.07.24
申请号 JP20070003296 申请日期 2007.01.11
申请人 TOPPAN PRINTING CO LTD 发明人 KON MASATO
分类号 H01L21/336;H01L21/28;H01L29/417;H01L29/786 主分类号 H01L21/336
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