| 摘要 |
A method of patterning a first resist layer (10') according to a pattern formed in a patterned second resist layer (14') formed thereon. A first resist material (10) is first at least partially pyrolyzed so as to form a hard mask resist layer (10'). A surface of the first resist layer (10') then generally functionalized with a silicon-containing group, such as by way of silylation, so as to define a silicon-containing surface layer (12). The first resist layer (10') (including silylated surface layer 12) is then, for example, dry developed according to the pattern formed in the second resist layer to form a corresponding pattern in the hard mask layer (10'). The patterned second resist layer (14') may be, for example, about 80 nm to about 100 nm thick. |
