| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymer which has dry etching resistance, is high in sensitivity, resolution and light transmittance, and is wide in focal depth margin, when used for resist compositions for DUV excimer laser lithography or the like, is little in defects, when developed, and can resist to thin resist films, to provide a resist composition, and to provide a method for producing a substrate on which a resist pattern is formed. <P>SOLUTION: The present invention relates to the polymer for resists, containing constituting units (A) each having a specific naphthalene skeleton, to the resist composition, and to the method for producing the substrate on which the resist pattern is formed, characterized by having a process for coating the resist composition on a substrate to form a resist film, a process for exposing to light having a wavelength of ≤250 nm, and a process for developing with a developing liquid. <P>COPYRIGHT: (C)2008,JPO&INPIT |
