| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a SOI structure, in which an electric potential of a body region in an element-forming region isolated by a partial isolation region can be fixed with high stability. SOLUTION: A MOS transistor comprising a source region (51), a drain region (61) and an H gate electrode (71) is formed in an element forming region isolated by a partial oxide film (31). The H gate electrode (71) electrically isolates a body region (13), formed in a gate width W direction adjacent to the source region (51) and the drain region (61) from the drain region (61) and the source region (51) through "I" in a transverse direction ( vertical directions in Figure), a center "-" functions as a gate electrode of the original MOS transistor. COPYRIGHT: (C)2008,JPO&INPIT
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