发明名称 METHOD FOR MANUFACTURING ALUMINUM OXIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing a high quality aluminum oxide single crystal by precisely controlling the temperature for melting and leaving a raw material not to overheat the crucible, by which an occurrence of inclusion is prevented. SOLUTION: In a method for manufacturing an aluminum oxide single crystal by a melting and solidifying method wherein a raw material for the single crystal is charged into a crucible in a furnace, heated, melted, and a grown crystal is pulled up from the raw material melt, the raw material for the single crystal is melted first under a condition sufficient to remove a gas generated from the raw material for the single crystal by heating in an atmosphere of nitrogen or an inert gas when the raw material for the single crystal is heated and melted. Then, oxygen is introduced into the furnace and the raw material melt is continuously heated in the mixed gas atmosphere comprising oxygen and nitrogen or an inert gas and kept at 2,050-2,150°C for a sufficient time to an extent not to oxidize the inside of the crucible. Subsequently, the grown crystal is pulled up. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008169069(A) 申请公布日期 2008.07.24
申请号 JP20070003327 申请日期 2007.01.11
申请人 SUMITOMO METAL MINING CO LTD 发明人 TERAJIMA AKIRA;KOMI TOSHIYUKI
分类号 C30B29/20;C30B15/00 主分类号 C30B29/20
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