| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of keeping ESD resistance high irrespective of a progress in downscaling of semiconductor device. SOLUTION: An ESD protective device in a region B is provided with a p<SP>+</SP>-type contact region 16E and an n<SP>+</SP>-type source region 17E on the surface of a p-type base layer 14. A p<SP>+</SP>-type diffusion layer 15 is not formed just under the n<SP>+</SP>-type source 17E unlike an n<SP>+</SP>-type source region 17 in a region A and a sheet resistor R1 in the n<SP>+</SP>-type source region 17E is larger than a sheet resistor R2 in the n<SP>+</SP>-type source 17 (R1>R2). In addition, an n<SP>+</SP>-type drain region 18E and an n<SP>-</SP>-type expansion region 19E extending towards the layer 14 from the drain region 18E are formed in a region spaced out from the p-type base layer 14 in the region B. The length of the n<SP>-</SP>-type expansion region 19E in the horizontal direction is made smaller than the length L2 of the n<SP>-</SP>-type expansion region 19 in the horizontal direction (L1<L2). COPYRIGHT: (C)2008,JPO&INPIT
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