| 摘要 |
PROBLEM TO BE SOLVED: To fabricate a Schottky barrier diode in which a decrease in on current caused by parasitic resistance is suppressed, variations in on current are suppressed, and an increase in off current is suppressed. SOLUTION: An island-shape semiconductor film is formed, a first n-type impurity region is formed on the island-shape semiconductor film, and an insulating film covering the island-shape semiconductor film and provided with an opening for an anode and an opening for a cathode is formed. The opening for the anode is masked, a p-type impurity element is added to the n-type impurity region, and a second n-type impurity region containing an n-type impurity element and the p-type impurity element is formed. Since the p-type impurity element is added through the opening for the cathode, the periphery of the opening is also doped with a slight amount of the p-type impurity element. Accordingly, since the first n-type impurity region and cathode wiring are located away a short distance from each other such that they are not shorted, the increase of the parasitic resistance and the off current is suppressed. COPYRIGHT: (C)2008,JPO&INPIT |
