发明名称 SOLID STATE IMAGING APPARATUS, IMAGING APPARATUS AND SOLID STATE IMAGING APPARATUS MANUFACTURING METHOD
摘要 A solid state imaging apparatus comprises: a semiconductor substrate; a photoelectric converting portion on the semiconductor substrate; a light shielding film in a region excluding a light receiving surface of the photoelectric converting portion; and a P-type impurity layer between a lower surface of the light shielding film and the semiconductor substrate.
申请公布号 US2008173902(A1) 申请公布日期 2008.07.24
申请号 US20080015608 申请日期 2008.01.17
申请人 MATSUDA JIRO;NAGASE MASANORI;TAKAHASHI SHU 发明人 MATSUDA JIRO;NAGASE MASANORI;TAKAHASHI SHU
分类号 H01L31/0216;H01L21/339;H01L27/14;H01L27/148;H04N5/335;H04N5/359;H04N5/369 主分类号 H01L31/0216
代理机构 代理人
主权项
地址