发明名称 |
SOLID STATE IMAGING APPARATUS, IMAGING APPARATUS AND SOLID STATE IMAGING APPARATUS MANUFACTURING METHOD |
摘要 |
A solid state imaging apparatus comprises: a semiconductor substrate; a photoelectric converting portion on the semiconductor substrate; a light shielding film in a region excluding a light receiving surface of the photoelectric converting portion; and a P-type impurity layer between a lower surface of the light shielding film and the semiconductor substrate.
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申请公布号 |
US2008173902(A1) |
申请公布日期 |
2008.07.24 |
申请号 |
US20080015608 |
申请日期 |
2008.01.17 |
申请人 |
MATSUDA JIRO;NAGASE MASANORI;TAKAHASHI SHU |
发明人 |
MATSUDA JIRO;NAGASE MASANORI;TAKAHASHI SHU |
分类号 |
H01L31/0216;H01L21/339;H01L27/14;H01L27/148;H04N5/335;H04N5/359;H04N5/369 |
主分类号 |
H01L31/0216 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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