发明名称 |
Selective deposition method |
摘要 |
The invention relates to a deposition method performing the following steps. A substrate is provided which is structured to comprise a first surface and a second surface, which differ in at least one of geometric orientation and vertical distance to a principle surface of the substrate. An etchable layer is deposited on the first surface via an atomic layer deposition technique the deposition technique using a first precursor supplied in an amount sufficient to cover at least parts of the first surface and insufficient to cover the second surface, the first precursor being supplied from a direction to pass the first surface before the second surface. A dielectric layer of at least one of a transition metal oxide and a transition metal nitride is deposited on at least the second surface via an atomic layer deposition technique using a second precursor.
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申请公布号 |
US2008173917(A1) |
申请公布日期 |
2008.07.24 |
申请号 |
US20070655664 |
申请日期 |
2007.01.19 |
申请人 |
PATZ MATTHIAS;IVANOV ALEXEY;KUDELKA STEPHAN |
发明人 |
PATZ MATTHIAS;IVANOV ALEXEY;KUDELKA STEPHAN |
分类号 |
H01L27/108;H01L21/334 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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