发明名称 RESISTS FOR LITHOGRAPHY
摘要 New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
申请公布号 US2008176166(A1) 申请公布日期 2008.07.24
申请号 US20070774171 申请日期 2007.07.06
申请人 COOPER GREGORY D;CHEN ZHIYUN;GONEN WILLIAMS Z SERPIL;THOMPSON LARRY F 发明人 COOPER GREGORY D.;CHEN ZHIYUN;GONEN WILLIAMS Z. SERPIL;THOMPSON LARRY F.
分类号 G03F7/004;B32B9/00;G03F7/20 主分类号 G03F7/004
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