发明名称 |
ZNO NANOSTRUCTURE-BASED LIGHT EMITTING DEVICE |
摘要 |
<p>ZnO nanostructure-based LEDs are provided to improve the emission efficiency. The devices include several configurations. Single crystal ZnO or MgxZni-x0 nanotips are grown on the top of a GaN p-n junction. Also, n-type ZnO nanotips are grown on p-GaN film to form an n-type ZnO nanotip/p-GaN heteroj unction LED. A ZnO LED can be formed when depositing n-type ZnO nanotips on a p-type ZnO film layer. The ZnO nanotips, with a p-n junction in the tips, can be grown on glass for a low cost nano-LED, and can be grown on Si substrates to form an integrated ZnO nanoLED array on Si chips.</p> |
申请公布号 |
WO2008088320(A1) |
申请公布日期 |
2008.07.24 |
申请号 |
WO2007US00708 |
申请日期 |
2007.01.11 |
申请人 |
RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY;ZHONG, JIAN;LU, YICHENG |
发明人 |
ZHONG, JIAN;LU, YICHENG |
分类号 |
H01L33/08;H01L33/18;H01L33/22;H01L33/26;H01L33/28 |
主分类号 |
H01L33/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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