| 摘要 |
<p>This invention provides a method for silicon thin film formation, which can form a crystalline silicon thin film at low cost with high productivity under a relatively low temperature, and a method for silicon thin film formation, which can provide a substrate for a thin film transistor with no significant leak current. The method for silicon thin film formation comprises exposing a substrate (S) to plasma of hydrogen-containing gas for hydrogen bond treatment and then forming a crystalline silicon thin film on the substrate (S). A substrate, which can provide a thin film transistor with high electron transfer and a small off-state current, can be provided by adopting, as a substrate (S), a substrate which is a nitrogen-containing gate insulating film comprising a substrate body having a target surface onto which a film is to be formed.</p> |
