| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device using a gate insulator destruction type anti-fuse element as a storage element, which achieves low resistance in writing operation and low capacity in reading operation. <P>SOLUTION: In a memory cell array 2, a plurality of word lines WLp are arranged for selecting memory cells 1 in the row direction thereof and also read bit line pairs RBLt, RBLc are arranged for reading out data from the memory cells 1 in the direction orthogonal to the word lines WLp. Further, write bit lines WBLn are also arranged for writing the data into the memory cells 1. The read bit line pairs RBLt, RBLc are input to sense amplifiers 4. Even-numbered memory cells among the plurality of memory cells 1 arrayed in the bit line direction, are connected to the former read bit lines RBLt, RBLc, and odd-numbered memory cells are connected to the latter. <P>COPYRIGHT: (C)2008,JPO&INPIT |
