| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a split-type carbon crucible which inhibits SiO deposition at areas near split surfaces of the crucible, suppresses wear of carbon caused by the deposition at the split surfaces and the crucible inner surface and solves the problems such as the deformation of a quartz crucible, the resulting growth inhibition (yield reduction) of a single crystal and the damage of the carbon crucible. <P>SOLUTION: The carbon crucible 15 holds the quartz crucible 1a used for containing a silicon melt when pulling up the silicon single crystal by the Czochralski method. The carbon crucible 15 comprises a plurality of split pieces 12a and 12b that is split along a radially formed parting line. A ridge part, which is composed of the outer peripheral surfaces of the split pieces 12a and 12b and the split surface, has chamfered edges 13. <P>COPYRIGHT: (C)2008,JPO&INPIT |
