发明名称 PLASMA TREATMENT APPARATUS, PLASMA TREATMENT METHOD, AND STORAGE MEDIUM
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus having favorable temperature control properties of the sidewall of a treatment container and suppressing damages to a substrate by plasma. <P>SOLUTION: A plasma treatment apparatus is provided with: a first electrode and a second electrode provided to oppose to a mounting platform at the upper part of a treatment container; a gas supply section for supplying a treatment gas between the first electrode and the second electrode; a high-frequency power supply section for applying high-frequency electric power between these electrodes to bring the treatment gas supplied between the first electrode and the second electrode into a plasma state; and a means for evacuating an atmosphere in the treatment container from the lower part of the treatment container. In the vicinity of the substrate on the mounting platform, the electronic temperature of plasma becomes low, and damage caused to the substrate by the plasma can be suppressed. Moreover, a metal can be used as a material for the treatment container, so that its temperature control properties are favorable. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008172168(A) 申请公布日期 2008.07.24
申请号 JP20070006206 申请日期 2007.01.15
申请人 TOKYO ELECTRON LTD 发明人 SAWADA IKUO;PETER VENTZEK;OSHITA TATSURO;MATSUZAKI KAZUYOSHI;KO SHOJUN
分类号 H01L21/3065;H01L21/205;H05H1/46 主分类号 H01L21/3065
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