| 摘要 |
The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region ( 7 ), a drain region ( 8 ) and a channel region lying in between being formed in a substrate ( 1 ). In order to realize locally delimited memory locations (LB, RB), an electrically non-conductive charge storage layer ( 3 ) situated on a first insulation layer ( 2 ) is divided by an interruption (U), thereby preventing, in particular, a lateral charge transport between the memory locations (LB, RB) and significantly improving the charge retention properties.
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