| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method capable of forming a fine pattern having a pitch beyond a lithography limit. <P>SOLUTION: The method for forming a fine pattern of a semiconductor device includes: a step for forming a first photoresist film by coating a semiconductor substrate, where a layer to be engraved chemically is formed, with a first photoresist composition; a step for forming a first photoresist pattern by performing exposure and development processes to the first photoresist film; a step for forming a second photoresist film without reacting with the first photoresist pattern on a resultant object; and a step for forming a second photoresist pattern between the first photoresist patterns by performing exposure and development processes to the second photoresist film. <P>COPYRIGHT: (C)2008,JPO&INPIT |
