| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method capable of forming a fine pattern having a pitch beyond a lithography limit. <P>SOLUTION: The method for forming a fine pattern of a semiconductor device includes: a step for forming a first photoresist pattern on a semiconductor substrate where a layer to be engraved chemically is formed; a step for coating the first photoresist pattern with a pattern hardening coating agent to form a pattern hardening film; a step for forming a second photoresist film on a resultant object; and a step for selectively performing exposure and development processes to the second photoresist film to form a second photoresist pattern between the first photoresist patterns. <P>COPYRIGHT: (C)2008,JPO&INPIT |
