| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus that relieves a blooming phenomenon caused by allowing charge overflowing from a thin-out row to leak into a read operation row in thin-out read, and can maintain satisfactory image quality. SOLUTION: A transfer pulse TRG to be supplied to a transistor for read selection is set to be anti-blooming potential so that the charge overflowing at the charge generation section of the thin-out row can be easily transferred to the floating diffusion side of the thin-out row in a thin-out read mode. As the anti-blooming potential, intermediate potential M between L and H levels is used. A potential barrier at the charge generation section of the thin-out row is lowered as compared with a case where the normal L level is applied, thus easily discharging unnecessary charge collected at the charge generation section of the thin-out row and overflowed into an adjacent row to the floating diffusion side, and hence reducing blooming to the unit pixel of an adjacent read row. COPYRIGHT: (C)2008,JPO&INPIT
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