| 摘要 |
A semiconductor device and a method of forming a metal pad of a semiconductor device is provided. The method includes forming a pre-metal dielectric (PMD) layer on a semiconductor substrate and a metal plug through the pre-metal dielectric layer. A metal layer may then be formed on the pre-metal dielectric layer including the metal plug and the metal layer may be selectively etched to form a wiring and a metal pad. Next, a passivation layer may be formed on the PMD layer including the wiring and the metal pad and a photoresist pattern may be formed on the passivation layer. The passivation layer may be selectively removed to expose the metal pad, the photoresist pattern may be removed and a wet cleaning process may be peformed. Then, a radio frequency (RF) sputter etch process may be performed on the semiconductor substrate on which the wet cleaning process has been performed.
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