| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that can reduce fluctuation and deterioration in characteristics. SOLUTION: As a material for offset spacer, a HfSiON film 15 is formed covering a silicon substrate 10 and a gate structure by nitriding the front surface after deposition of HfSiO. Next, the anisotropic dry etching is conducted to the HfSiON film 15 to largely damage only a region along the top surfaces of the silicon substrate 10 and gate electrode layer 14. Next, only the largely damaged region of the HfSiON film 15 is selectively removed with the wet-etching process by conducting the cleaning process for about 90 seconds using the aqueous solution of hydrofluoric acid in the concentration of about 5%. COPYRIGHT: (C)2008,JPO&INPIT
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