发明名称 Semiconductor device and method for fabricating the same
摘要 A semiconductor device includes a semiconductor substrate having an active region defined by a device isolation structure. A recessed channel is formed on the semiconductor substrate under the active region. A recessed junction region is formed between the recessed channel and the device isolation structure adjacent to the recessed channel.
申请公布号 US2008173939(A1) 申请公布日期 2008.07.24
申请号 US20070976578 申请日期 2007.10.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SHIM DONG HWA
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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