| 摘要 |
An ion implantation device includes: an ion source for retrieving an ion beam; a passage for passing the ion beam therethrough; a mass analysis magnet for selecting a predetermined ion species from the ion beam, the mass analysis magnet disposed in the passage; an implantation chamber for implanting the predetermined ion species in a target with the ion beam output from the mass analysis magnet; and an inner pressure controller for introducing an gas into the passage and for controlling an inner pressure of the passage. Since the above device includes the inner pressure controller, a concentration profile of the implanted ions in the target is appropriately controlled.
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