| 摘要 |
A semiconductor device in which the transfer rate can be enhanced between chips without causing any noise or crosstalk. Input/output circuits, i.e. input circuits (27, 37) and output circuits (26, 36), are arranged directly beneath every connection pads (21, 31) for connecting a storage device chip (20) and the chip in an ASIC (30). The circuits are arranged in array or lattice and the storage device chip (20) and the ASIC (30) are mounted to face each other on the both surfaces of the wiring chip. |
