CRYSTALLOGRAPHIC PREFERENTIAL ETCH TO DEFINE A RECESSED-REGION FOR EPITAXIAL GROWTH
摘要
A semiconductor device (100) comprising a gate structure (105) on a semiconductor substrate (110) and a recessed-region (115) in the semiconductor substrate. The recessed- region has a widest lateral opening (120) that is near a top surface (122) of the semiconductor substrate. The widest lateral opening undercuts the gate structure.
申请公布号
WO2007124415(A3)
申请公布日期
2008.07.24
申请号
WO2007US67072
申请日期
2007.04.20
申请人
TEXAS INSTRUMENTS INCORPORATED;ROTONDARO, ANTONIO LUIS, PACHECO;HURD, TRACE, Q.;KOONTZ, ELISABETH, MARLEY
发明人
ROTONDARO, ANTONIO LUIS, PACHECO;HURD, TRACE, Q.;KOONTZ, ELISABETH, MARLEY
