| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a trench gate, which has no problem of a short circuit of a cell contact, has no burr left due to a silicon substrate material in the gate trench and has satisfactory characteristics. <P>SOLUTION: The gate trench 10a is first formed on a silicon substrate 10, and then, an element isolation region 16a is formed on the silicon substrate 10 where the gate trench 10a is formed. With this configuration, the burr of the silicon substrate material in the gate trench 10a is prevented and an ideal trench shape can be obtained. <P>COPYRIGHT: (C)2008,JPO&INPIT |
