| 摘要 |
A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer, a first sinker, a first buried layer, a second epitaxial layer, a second sinker and a second buried layer. The first and second epitaxial layers are disposed sequentially on the substrate. The first sinker and the first buried layer define a first area from the first and the second epitaxial layers. The second sinker and the second buried layer define a second area from the second epitaxial layer in the first area. An active device is disposed in the second area. The first buried layer is disposed between the first area and the substrate, and is connected to the first sinker. The second buried layer is disposed between the second area and the first epitaxial layer, and is connected to the second sinker.
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