发明名称 |
Self-aligned methods based on low-temperature selective epitaxial growth for fabricating silicon carbide devices |
摘要 |
Self-aligned fabrication of silicon carbide semiconductor devices is a desirable technique enabling reduction in the number of photolithographic steps, simplified alignment of different device regions, and reduced spacing between the device regions. This invention provides a method of fabricating silicon carbide (SiC) devices utilizing low temperature selective epitaxial growth which allows avoiding degradation of many masking materials attractive for selective epitaxial growth. Another aspect of this invention is a combination of the low temperature selective epitaxial growth of SiC and self-aligned processes.
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申请公布号 |
US2008173875(A1) |
申请公布日期 |
2008.07.24 |
申请号 |
US20070787144 |
申请日期 |
2007.04.13 |
申请人 |
KOSHKA YAROSLAV;MELNYCHUK GALYNA |
发明人 |
KOSHKA YAROSLAV;MELNYCHUK GALYNA |
分类号 |
H01L21/04;H01L29/15 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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