SEMICONDUCTOR SUBSTRATE PROCESSING

摘要

A semiconductor processing method comprising the sequential steps of: i) providing a semiconductor substrate; ii) forming a first layer of a semiconductor material on a surface of the substrate; iii) forming a second layer of a semiconductor material on a surface of the first layer; iv) selectively removing by etching at least a portion of the first layer; and v) forming a dielectric layer between the second layer and the semiconductor substrate in place of the removed portion of the first layer.