| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for enabling reduction in size of a forming area and acquisition of capacitance of a capacitor. <P>SOLUTION: A DRAM cell is formed in an active region 7 specified by a separation trench 40 formed at an upper part of a silicon substrate 1 and capacitors C1, C2 are formed at an end part of the relevant active region 7. At the front surface of the end part of the active region 7 wherein the capacitors C1, C2 are formed, an epitaxial layer 25 is formed with a selective epitaxial growth method and this front surface is wider than the other part. In the relevant capacitors C1, C2, an impurity diffusing layer 24 where the wider part is formed is defined as a first electrode and an electrode 22 formed thereon via a dielectric material layer 21 is defined as a second electrode. <P>COPYRIGHT: (C)2008,JPO&INPIT |
