| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide polishing slurry useful for removing a ruthenium-barrier layer which is a copper interconnect seed layer. <P>SOLUTION: The polishing slurry includes 0.001 to 10 weight percent periodic acid or salt, at least 0.0001 weight percent inhibitor for reducing removal rate of nonferrous interconnect metals, 0.00001 to 5 weight percent organic additive for reducing insulator removal rate, the organic additive being selected from at least one of water soluble polymers and surfactants, the organic additive containing an ethylene oxide group or an amide group, 0.1 to 50 weight percent abrasive and balance water; and the slurry having a pH of greater than 8 to 12. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
