| 摘要 |
PROBLEM TO BE SOLVED: To establish the method of manufacturing a semiconductor device that can improve embedding performance for a groove as well as ensure embedding height of the groove. SOLUTION: The method of manufacturing a semiconductor device includes a step to form grooves 3 and 4 having different widths in an interlayer film 2 on a semiconductor substrate 1; a step to form a barrier metal layer 5 on the interlayer film 2 wherein the grooves 3 and 4 are formed; a step to form a resist mask 7 that covers the barrier metal layer 5 and has an opening in a region wherein the grooves 3 and 4 are formed; a step to remove an overhang part 6 by etching the barrier metal layer 5 by using the resist mask 7; a step to embed a wiring material in the grooves 3 and 4 on the semiconductor substrate 1 after removing the resist mask 7; and a step to remove an excessive part of the wiring material and the barrier metal layer 5 on the semiconductor substrate 1 by grinding them. Thus, groove wiring can be formed. COPYRIGHT: (C)2008,JPO&INPIT |
