| 摘要 |
PROBLEM TO BE SOLVED: To suppress the heterogeneity of temperature distribution in a semiconductor device while keeping an interval between gate electrodes uniform. SOLUTION: The semiconductor device has a first conductive type first semiconductor area 4, a second conductive type second semiconductor area 12 that is in contact with the surface of the first semiconductor area 4, a first conductive type third semiconductor area 20 that is separated from the first semiconductor area 4 by the second semiconductor area 12, and a plurality of gate electrodes 8 that are opposite to the second semiconductor area 12 isolating the first semiconductor area 4 and the third semiconductor area 20 with an insulation film 18 between. Resistance between a first electrode 2 and a second electrode 14 when applying an on-state voltage to a gate electrode 8 is made large at a central portion A1 and small at its periphery A2, respectively, when a semiconductor device 10 is viewed from its top. COPYRIGHT: (C)2008,JPO&INPIT
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