| 摘要 |
A method of fabricating and separating semiconductor structures comprises the steps of: (a) partially forming a semiconductor structure (514) attached to a support structure (550), the partially formed semiconductor structure comprising a plurality of partially formed devices, where the partially formed devices (500a,500b,500c) are attached to one another by at least one connective layer; (b) forming a partial mask layer over at least a part of the partially formed devices; (c) etching the connective layer to separate the devices; and (d) removing the partial mask layer. Advantages of the invention include higher yield than conventional techniques. In addition, less expensive equipment can be used to separate the devices. The result is a greater production of devices per unit of time and per dollar. |
